PD55003L STMicroelectronics, PD55003L Datasheet - Page 4

• Manufacturer Part Number: PD55003L
• Description: RF MOSFET Power N-Ch 40 Volt 2.5 Amp
• Manufacturer: STMicroelectronics

Specifications of PD55003L

• Forward Transconductance Gfs (max / Min): 1 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single Triple Drain Triple Gate
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: - 0.5 V to + 15 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 14 W
• Maximum Operating Temperature: + 150 C
• Package / Case: VFQFPN Power Flat 14
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 3W
• Power Gain (typ)@vds: 19dB
• Frequency (max): 1GHz
• Package Type: Power Flat
• Pin Count: 14
• Forward Transconductance (typ): 1S
• Input Capacitance (typ)@vds: 34@12.5VpF
• Output Capacitance (typ)@vds: 23@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 52%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 14000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD55003L
TYPICAL PERFORMANCE
Efficiency Vs Bias Current
Output Power Vs Gate-Source Voltage
4/13
80
70
60
50
40
30
20
10
7
6
5
4
3
2
1
0
0
0.0
0
50
0.5
100
1.0
150
1.5
200
Idq (mA)
Vgs (V)
250
2.0
300
2.5
350
Pin = 20 dBm
Vdd = 12.5 V
f = 500 MHz
Pin = 20 dBm
f = 500 MHz
Vdd = 12.5 V
3.0
400
3.5
450
500
4.0
Output Power Vs Supply Voltage
8
7
6
5
4
3
2
1
0
5
6
7
8
9
Vds (V)
10
11
12
Idq = 50 mA
Pin = 20 dBm
f = 500 MHz
13
14
15