PD54003 STMicroelectronics, PD54003 Datasheet - Page 7

• Manufacturer Part Number: PD54003
• Description: RF MOSFET Power N-Ch 25 Volt 4 Amp
• Manufacturer: STMicroelectronics

Specifications of PD54003

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 52.8 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 25V
• Output Power (max): 3W(Min)
• Power Gain (typ)@vds: 12dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 1.7S
• Input Capacitance (typ)@vds: 59@7.5VpF
• Output Capacitance (typ)@vds: 43@7.5VpF
• Reverse Capacitance (typ): 4@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 52800mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
Output Power vs. Gate-Source Voltage
4
3
2
0
5
1
6
4
3
2
1
0
5
6
500 MHz
1
VGS, GATE-SOURCE VOLTAGE (V)
VDD, SUPPLY VOLTAGE (V)
480 MHz
7
520 MHz
2
8
520 MHz
480 MHz
Pin= 22 dBm
Idq= 50 mA
Pin= 22 dBm
Vdd= 7.5 V
3
500 MHz
9
10
4
Drain Efficiency vs. Supply Volatge
70
60
50
40
30
5
500 MHz
6
VDD, SUPPLY VOLTAGE (V)
520 MHz
7
PD54003 - PD54003S
480 MHz
8
Pin= 22 dBm
Idq= 50 mA
9
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10