BLF573S NXP Semiconductors, BLF573S Datasheet - Page 9

• Manufacturer Part Number: BLF573S
• Description: RF MOSFET Power 300W, HF-500MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF573S

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.09 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 42 A
• Maximum Operating Temperature: + 225 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062175112

NXP Semiconductors
Table 9.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35 m.
[1]
BLF573S_2
Product data sheet
Component
C15
C16
C17
C19
L1
L2
L3
L4, L5
L6
L7
L8
R1
Fig 9.
American Technical Ceramics type 100B or capacitor of same quality.
input
50
Class-AB common-source production test circuit
List of components
C1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
2 turns enamelled copper wire
4 turns enamelled copper wire
stripline
stripline
stripline
stripline
stripline
metal film resistor
C2
L3
Figure 9
…continued
and
C3
C4
Figure
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
C5
Rev. 02 — 17 February 2009
C7
10.
C9
C8
Value
33 pF
36 pF
16 pF
220 F; 63 V
D = 3 mm;
d = 1 mm;
length = 2 mm;
leads = 2
D = 2 mm;
d = 1 mm;
length = 13 mm;
leads = 2
-
-
-
-
-
100 ; 0.6 W
C6
V
L4
GG
R1
V
L5
DD
6 mm
5 mm
L1
B1
C19
C20
C10
L6
C13
[1]
[1]
[1]
C11
Remarks
(L
(L
(L
(L
(L
C14
W) 96 mm
W) 15 mm
W) 105 mm
W) 3 mm
W) 12 mm
C12
HF / VHF power LDMOS transistor
C15
6 mm
L2
3 mm
8 mm
6 mm
C16
6 mm
L7
L8
C17
BLF573S
© NXP B.V. 2009. All rights reserved.
C18
001aaj148
output
50
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