BLF6G22LS-130 /T3 NXP Semiconductors, BLF6G22LS-130 /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22LS-130 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-130 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-130,118

NXP Semiconductors
BLF6G22LS-130_1
Product data sheet
Fig 2.
Fig 3.
(dBc)
IMD
20
40
60
80
0
0
V
Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
2
DS
DS
= 2170.05 MHz.
= 28 V; I
= 28 V; I
50
7.3 Two-tone CW
Dq
Dq
= 1100 mA; f
= 1100 mA; f
100
150
1
1
(dB)
G
= 2169.95 MHz; f
= 2169.95 MHz;
p
19
17
15
13
0
200
P
L(PEP)
001aai095
IMD3
IMD5
IMD7
G
(W)
D
250
p
40
Rev. 01 — 23 May 2008
2
= 2170.05 MHz.
80
Fig 4.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
20
40
60
120
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power;
typical values
Dq
Dq
Dq
Dq
Dq
DS
P
001aai094
L
= 900 mA
= 1000 mA
= 1100 mA
= 1200 mA
= 1300 mA
= 28 V; f
(W)
50
160
60
40
20
0
1
(%)
= 2169.95 MHz; f
BLF6G22LS-130
D
100
(1)
(2)
(5)
(3)
(4)
Power LDMOS transistor
150
2
= 2170.05 MHz.
© NXP B.V. 2008. All rights reserved.
200
P
L(PEP)
001aai096
(W)
250
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