BLF4G20LS-130 NXP Semiconductors, BLF4G20LS-130 Datasheet - Page 4

• Manufacturer Part Number: BLF4G20LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W
• Power Gain (typ)@vds: 14.6@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 65(Typ)@9.5Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 38.5%
• Mounting: Surface Mount
• Mode Of Operation: CW/GSM EDGE/2-Tone
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20LS-130,112

NXP Semiconductors
BLF4G20LS-130_1
Product data sheet
7.2 One-tone CW
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
V
typical values
DS
= 28 V; I
Dq
= 900 mA; T
(dB)
G
p
Rev. 01 — 1 June 2007
16
14
12
10
0
case
= 25 C; f = 1990 MHz.
40
G
D
p
80
120
BLF4G20LS-130
P
001aag526
L
UHF power LDMOS transistor
(W)
160
60
40
20
0
(%)
D
© NXP B.V. 2007. All rights reserved.
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