BLF4G20LS-130 NXP Semiconductors, BLF4G20LS-130 Datasheet - Page 3

• Manufacturer Part Number: BLF4G20LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W
• Power Gain (typ)@vds: 14.6@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 65(Typ)@9.5Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 38.5%
• Mounting: Surface Mount
• Mode Of Operation: CW/GSM EDGE/2-Tone
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20LS-130,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF4G20LS-130_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-tone (200 kHz tone spacing); f
I
The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
G
RL
IMD3
IMD5
IMD7
Dq
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
th(j-case)
DS(on)
rs
p
= 25 C unless otherwise specified.
= 900 mA; T
in
= 900 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
fifth order intermodulation distortion P
seventh order intermodulation
distortion
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from junction
to case
case
L
= 130 W (CW); f = 1990 MHz.
= 25 C; unless otherwise specified.
Rev. 01 — 1 June 2007
Conditions
V
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 7.5 A
= 0 V; I
= 10 V; I
= 28 V; I
= 0 V; V
= V
= 10 V
= 15 V; V
= 10 V; I
= V
= 0 V; V
Conditions
P
P
P
P
P
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
Conditions
T
P
GS(th)
GS(th)
1
case
L
= 1930 MHz; f
= 50 W
D
DS
DS
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
= 130 W
D
D
D
= 80 C;
= 2.1 mA
+ 6 V;
+ 6 V;
DS
= 230 mA
= 900 mA
= 7.5 A
= 28 V
= 28 V;
= 0 V
BLF4G20LS-130
UHF power LDMOS transistor
2
= 1990 MHz; V
Min
13
-
34.5
-
-
-
Min
65
2.5
2.65
-
35
-
-
-
-
Typ
0.49
DS
Typ
14.6
38.5
= 28 V;
Typ
-
2.9
3.15
-
42
-
11
0.065 -
3
10
30
39.5
58.5
© NXP B.V. 2007. All rights reserved.
Max
0.58
DS
Max
-
-
Max
-
3.5
3.65
5
-
420
-
-
7
27
35.5
54
= 28 V;
Unit
K/W
3 of 11
Unit
V
V
V
A
nA
S
pF
Unit
dB
dB
%
dBc
dBc
dBc
A