BLF6G38S-25 NXP Semiconductors, BLF6G38S-25 Datasheet - Page 8

• Manufacturer Part Number: BLF6G38S-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38S-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 4.5W(Typ)
• Power Gain (typ)@vds: 15@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.8GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580@6.15Vmohm
• Reverse Capacitance (typ): 0.59@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 24%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38S-25,112

NXP Semiconductors
Table 9.
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Component
L1
R1, R2
R3
List of components (see
Table 10.
f
MHz
3400
3450
3500
3550
3600
Fig 11. Definition of transistor impedance
Description
ferrite SMD bead
SMD resistor
SMD resistor
Measured test circuit impedances
Figure
10)
Rev. 02 — 23 December 2008
…continued
Z
14.65 + j29.87
14.16 + j28.69
14.56 + j30.52
17.49 + j30.11
15.50 + j29.36
BLF6G38-25; BLF6G38S-25
S
gate
Value
-
20
9.1
Z
S
001aag189
Z
drain
L
Remarks
Ferroxcube BDS3/3/4.6-4S2 or equivalent
SMD 1206
SMD 1206
WiMAX power LDMOS transistor
Z
13.46 + j3.58
13.56 + j4.12
13.76 + j4.74
13.97 + j5.41
14.16 + j5.95
L
© NXP B.V. 2008. All rights reserved.
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