BLF6G38S-25 NXP Semiconductors, BLF6G38S-25 Datasheet

RF MOSFET Small Signal LDMOS TNS

BLF6G38S-25

Manufacturer Part Number
BLF6G38S-25
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38S-25

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.58 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
2.1 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
4.5W(Typ)
Power Gain (typ)@vds
15@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.8GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
2.8S
Drain Source Resistance (max)
580@6.15Vmohm
Reverse Capacitance (typ)
0.59@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
24%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38S-25,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G38S-25
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF6G38S-25
Manufacturer:
ANAREN
Quantity:
5 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
25 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
I
I
I
I
I
I
I
I
I
I
Mode of operation
1-carrier N-CDMA
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
Rev. 02 — 23 December 2008
Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3400 MHz to 3800 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
N
N
N
N
Average output power = 4.5 W
Power gain = 15 dB
Drain efficiency = 24 %
ACPR
Typical performance
885k
[1]
= 45 dBc in 30 kHz bandwidth
f
(MHz)
3400 to 3600
case
= 25 C in a class-AB production test circuit.
V
(V)
28
DS
P
(W)
4.5
L(AV)
Dq
G
(dB)
15
p
of 225 mA:
24
(%)
D
Product data sheet
ACPR
(dBc)
45
[2]
885k
ACPR
(dBc)
61
[2]
1980k

Related parts for BLF6G38S-25

BLF6G38S-25 Summary of contents

Page 1

... BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical RF performance at T Mode of operation 1-carrier N-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol R th(j-case) BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged ceramic package; 2 mounting holes; 2 leads - ceramic earless flanged package; 2 leads Limiting values Parameter ...

Page 3

... ACPR 885k ACPR 1980k [1] Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 Characteristics Conditions drain-source breakdown V voltage ...

Page 4

... FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 1. EVM as function of load power; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 30 subchannels; P Frame structure FCH 2 symbols 4 subchannels data 2 symbols 26 subchannels data 44 symbols 30 subchannels 001aah594 ...

Page 5

... Adjacent channel power ratio as function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance average 7.3.1 Graphs (dB 3400 3450 3500 P = 4.5 W. L(AV) Fig 4. Power gain and drain efficiency as functions of frequency; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 17 ACPR (dBc) 29 (2) 41 (1) (1) ( 001aah597 27 D (%) ACPR (dBc ...

Page 6

... 225 mA; single carrier N-CDMA PAR = 9 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. ( 3400 MHz ( 3500 MHz ( 3600 MHz Fig 8. Power gain as function of load power; typical values BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 001aah599 48 30 ACPR D (dBc) (%) (W) L (1) Low frequency component (2) High frequency component Fig 7 ...

Page 7

... C14, C15 multilayer ceramic chip capacitor 1 nF C16, C17 multilayer ceramic chip capacitor 100 nF C19 multilayer ceramic chip capacitor C20 electrolytic capacitor C21 multilayer ceramic chip capacitor 10 pF BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 C16 C17 Figure 10) Value 470 F ...

Page 8

... R1, R2 SMD resistor R3 SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Fig 11. Definition of transistor impedance BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 Figure 10) …continued Value - 20 9.1 Measured test circuit impedances Z S 14.65 + j29.87 14.16 + j28.69 14.56 + j30.52 17.49 + j30.11 15 ...

Page 9

... UNIT 4.62 7.24 10.21 0.15 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inches 0.275 0.148 0.004 0.394 OUTLINE VERSION IEC SOT608A Fig 12. Package outline SOT608A BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S- scale 10.29 10.21 10.29 1.14 15.75 3.30 10.03 10.01 10 ...

Page 10

... DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT 4.62 7.24 0.15 10.21 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inch 0.148 0.275 0.004 0.394 OUTLINE VERSION IEC SOT608B Fig 13. Package outline SOT608B BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S- scale 10.29 10.21 10.29 1.14 15 ...

Page 11

... WCS WiMAX 11. Revision history Table 12. Revision history Document ID BLF6G38-25_BLF6G38S-25_2 Modifications: BLF6G38-25_BLF6G38S-25_1 BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave ElectroStatic Discharge Error Vector Magnitude Frame Control Header Fast Fourier Transform Instantaneous BandWidth Interim Standard 95 ...

Page 12

... For more information, please visit: For sales office addresses, please send an email to: BLF6G38-25_BLF6G38S-25_2 Product data sheet BLF6G38-25; BLF6G38S-25 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G38-25_BLF6G38S-25_2 All rights reserved. Date of release: 23 December 2008 ...

Related keywords