BLF6G38S-25 NXP Semiconductors, BLF6G38S-25 Datasheet - Page 3

• Manufacturer Part Number: BLF6G38S-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38S-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 4.5W(Typ)
• Power Gain (typ)@vds: 15@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.8GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 2.8S
• Drain Source Resistance (max): 580@6.15Vmohm
• Reverse Capacitance (typ): 0.59@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 24%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38S-25,112

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G38-25_BLF6G38S-25_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel
bandwidth is 1.2288 MHz; f
V
circuit.
[1]
The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
G
RL
ACPR
ACPR
DSS
DSX
GSS
j
DS
fs
DS
D
(BR)DSS
GS(th)
DS(on)
rs
p
= 25 C unless otherwise specified.
in
= 28 V; I
Measured within 30 kHz bandwidth.
= 28 V; I
885k
1980k
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Characteristics
Application information
Dq
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz) P
Dq
= 225 mA; T
= 225 mA; P
Rev. 02 — 23 December 2008
1
case
= 3400 MHz; f
L
= 25 C; unless otherwise specified, in a class-AB production
= P
BLF6G38-25; BLF6G38S-25
L(1dB)
; f = 3600 MHz.
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
2
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 3500 MHz; f
= 1.4 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= +11 V; V
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
Conditions
P
P
P
P
= 0.4 mA
+ 3.75 V;
+ 3.75 V;
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 40 mA
= 1.4 A
DS
= 28 V
= 28 V;
3
= 3600 MHz; RF performance at
WiMAX power LDMOS transistor
= 0 V
= 4.5 W
= 4.5 W
= 4.5 W
= 4.5 W
= 4.5 W
Min
65
1.4
-
6
-
-
-
-
[1]
[1]
Min Typ Max Unit
12.5 15
-
22
-
-
Typ
-
2
-
8.2
-
2.8
0.37
0.59
© NXP B.V. 2008. All rights reserved.
24
10 -
45
61
Max
-
2.4
1.5
-
150
-
0.58
-
-
-
40 dBc
56 dBc
3 of 13
Unit
V
V
A
nA
S
pF
dB
dB
%
A