BFG310W/XR T/R NXP Semiconductors, BFG310W/XR T/R Datasheet - Page 2

• Manufacturer Part Number: BFG310W/XR T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14000 MHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.01 A
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG310W/XR,115

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
9397 750 14245
Product data sheet
Table 1:
[1]
Table 2:
Table 3:
Table 4:
[1]
Symbol Parameter
MSG
NF
Pin
1
2
3
4
Type number
BFG310W/XR
Type number
BFG310W/XR
s
21
2
T
* = p: made in Hong Kong.
sp
is the temperature at the soldering point of the collector pin.
maximum stable gain
insertion power gain
noise figure
Quick reference data
Pinning
Ordering information
Marking codes
Description
collector
emitter
base
emitter
Package
Name
-
Rev. 01 — 2 February 2005
Description
plastic surface mounted package; reverse pinning;
4 leads
…continued
Conditions
I
f = 1.8 GHz; T
I
f = 1.8 GHz; T
Z
V
C
C
S
s
CE
= 5 mA; V
= 5 mA; V
=
= Z
= 3 V; f = 2 GHz
opt
L
= 50
; I
C
= 1 mA;
CE
CE
Marking code
A7*
amb
amb
= 3 V;
= 3 V;
Simplified outline
= 25 C
= 25 C;
NPN 14 GHz wideband transistor
3
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
[1]
BFG310W/XR
1
4
Min
-
-
-
Typ
18
14
1
Symbol
3
Max
-
-
-
sym086
Version
SOT343R
2, 4
1
Unit
dB
dB
dB
2 of 12