BLT50 T/R NXP Semiconductors, BLT50 T/R Datasheet - Page 4

• Manufacturer Part Number: BLT50 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT50 T/R

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT50,115

Philips Semiconductors
CHARACTERISTICS
T
April 1991
V
V
V
I
h
E
C
C
handbook, halfpage
j
CES
FE
(BR)CBO
(BR)CEO
(BR)EBO
SBR
= 25 C.
c
re
UHF power transistor
I
Fig.3
E
SYMBOL
= i
(pF)
C c
e
10
= 0; f = 1 MHz.
8
6
4
2
0
0
Collector capacitance as a function of
collector-base voltage, typical values.
2
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
second breakdown energy
collector capacitance
feedback capacitance
4
PARAMETER
6
8
V CB (V)
MEA218
10
4
open emitter;
I
open base;
I
open collector;
I
V
V
V
I
L = 25 mH;
R
f = 50 Hz
V
I
f = 1 MHz
V
I
f = 1 MHz
C
C
E
C
E
C
BE
CE
CE
CB
CE
BE
= 1 mA
= I
= 5 mA
= 10 mA
= 300 mA
= 0;
CONDITIONS
= 0;
= 10 V
= 5 V;
= 10
= 7.5 V;
= 7.5 V;
e
= 0;
20
10
3
25
0.55
MIN.
4.7
2.9
TYP.
Product specification
250
6
4.5
MAX.
BLT50
V
V
V
mJ
pF
pF
UNIT
A