BLT50 T/R NXP Semiconductors, BLT50 T/R Datasheet - Page 2

• Manufacturer Part Number: BLT50 T/R
• Description: RF Bipolar Power TAPE-7 TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLT50 T/R

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLT50,115

Philips Semiconductors
FEATURES
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
communications band.
PINNING - SOT223
April 1991
SMD encapsulation
Gold metallization ensures
excellent reliability.
UHF power transistor
PIN
1
2
3
4
emitter
base
emitter
collector
DESCRIPTION
age
QUICK REFERENCE DATA
RF performance at T
(note 1).
Note
1. T
PIN CONFIGURATION
c.w. narrow band
MODE OF OPERATION
s
Top view
= temperature at soldering point of collector tab.
1
2
2
s
Fig.1 Simplified outline and symbol.
60 C in a common emitter class-B test circuit
4
MSB002 - 1
3
470
f (MHz) V
handbook, halfpage
7.5
CE
(V)
1.2
P
L
(W)
Product specification
MBB012
G
b
p
10
(dB)
BLT50
c
e
c
55
(%)