BF245C NXP Semiconductors, BF245C Datasheet - Page 9

• Manufacturer Part Number: BF245C
• Description: RF JFET BULK FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245C

• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245C,112

NXP Semiconductors
1996 Jul 30
handbook, halfpage
N-channel silicon field-effect transistors
Fig.20 Drain-source on-state resistance as a
V
R DSon
DS
(kΩ)
= 0; f = 1 kHz; T
10
10
10
10
−1
1
3
2
function of gate-source voltage;
typical values.
0
amb
−1
BF245A
= 25 C.
−2
BF245B
−3
BF245C
V GS (V)
MGE790
−4
9
handbook, halfpage
V
Input tuned to minimum noise.
DS
Fig.21 Noise figure as a function of frequency;
(dB)
F
= 15 V; V
3
2
1
0
1
typical values.
GS
BF245A; BF245B; BF245C
= 0; R
G
10
= 1 k; T
amb
= 25 C.
10
2
typ
Product specification
f (MHz)
MGE786
10
3