BF245C NXP Semiconductors, BF245C Datasheet - Page 8
![RF JFET BULK FET-RFSS](/photos/16/4/160465/to3_sml.jpg)
BF245C
Manufacturer Part Number
BF245C
Description
RF JFET BULK FET-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF245C112.pdf
(13 pages)
Specifications of BF245C
Configuration
Single
Mounting Style
Through Hole
Transistor Polarity
N-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
- 30 V
Continuous Drain Current
25 mA
Maximum Operating Temperature
+ 150 C
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF245C,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF245C
Manufacturer:
FSC
Quantity:
24 000
Company:
Part Number:
BF245C
Manufacturer:
FAIRCHILD
Quantity:
63 000
Part Number:
BF245C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NXP Semiconductors
1996 Jul 30
handbook, halfpage
handbook, halfpage
N-channel silicon field-effect transistors
Fig.18 Forward transfer admittance as a function of
V
V
DS
DS
(mA/V)
(pF)
C is
|y fs |
= 20 V; f = 1 MHz; T
= 15 V; f = 1 kHz; T
Fig.16 Input capacitance as a function of
8
6
4
2
0
6
4
2
0
drain current; typical values.
0
0
gate-source voltage; typical values.
BF245A
−2
5
amb
amb
typ
= 25 C.
= 25 C.
−4
BF245B
10
−6
15
−8
BF245C
I D (mA)
V GS (V)
MGE777
MGE791
−10
20
8
handbook, halfpage
handbook, halfpage
at I D = 10 nA
V
V
Fig.19 Gate-source cut-off voltage as a function of
Fig.17 Reverse transfer capacitance as a function
DS
DS
V GSoff
(pF)
C rs
(V)
= 20 V; f = 1 MHz; T
= 15 V; T
1.5
0.5
1
0
−10
of gate-source voltage; typical values.
drain current; typical values.
−8
−6
−4
−2
−0
j
0
BF245A; BF245B; BF245C
= 25 C.
BF245A
−2
amb
typ
= 25 C.
BF245B
−4
10
I DSS at V GS = 0 (mA)
−6
BF245C
Product specification
20
−8
V GS (V)
MGE781
−10
MGE784
30