BFT46 T/R NXP Semiconductors, BFT46 T/R Datasheet - Page 6

• Manufacturer Part Number: BFT46 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFT46 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFT46,215

NXP Semiconductors
December 1997
handbook, halfpage
handbook, halfpage
N-channel silicon FET
Fig.8
(μA/V)
Fig.10 Typical values. V
|y os |
(pF)
C rs
10
10
1.5
0.5
10
1
0
1
3
2
0
0
 y
T
amb
os
 versus V
= 25 C.
typ
−1
10
DS
−2
DS
. I
D
= 10 V, T
= 0,4 mA; f = 1 kHz;
20
−3
V DS (V)
V GS (V)
amb
MDA267
MDA271
= 25 C.
30
−4
6
handbook, halfpage
handbook, halfpage
Fig.9 Typical values. V
I GSS
(nA)
(pF)
10
10
10
C is
Fig.11 I
10
−1
−2
−3
6
4
2
0
1
0
0
GSS
−1
versus T
50
j
. V
−2
DS
= 10 V; T
typ
GSS
100
= 10V; V
Product specification
−3
T j (°C)
V GS (V)
amb
MDA266
MDA268
= 25 C.
DS
BFT46
150
−4
= 0.