BLS2731-50 TRAY NXP Semiconductors, BLS2731-50 TRAY Datasheet - Page 7
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BLS2731-50 TRAY
Manufacturer Part Number
BLS2731-50 TRAY
Description
RF Bipolar Power BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet
1.BLS2731-50114.pdf
(8 pages)
Specifications of BLS2731-50 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
80000 mW
Package / Case
SOT-422
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS2731-50,114
Philips Semiconductors
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 30
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Microwave power transistor
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
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BLS2731-50
Product specification