BLS2731-50 TRAY NXP Semiconductors, BLS2731-50 TRAY Datasheet - Page 5
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BLS2731-50 TRAY
Manufacturer Part Number
BLS2731-50 TRAY
Description
RF Bipolar Power BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet
1.BLS2731-50114.pdf
(8 pages)
Specifications of BLS2731-50 TRAY
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
80000 mW
Package / Case
SOT-422
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS2731-50,114
Philips Semiconductors
1998 Jan 30
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
input
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
30
5
C4
C1
C2
30
r
= 2.2), thickness 0.38 mm.
MGM537
C3
output
BLS2731-50
Product specification
40