BLS2731-50 TRAY NXP Semiconductors, BLS2731-50 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS2731-50 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-50 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS2731-50,114

Philips Semiconductors
1998 Jan 30
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = ATC 200A 10 nF
C2 = ATC 100A 10 pF
C3 = ATC 700A 150 pF
C4 = Tekelec trimmer 37281SL 0.4 to 2.5 pF.
input
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
30
5
C4
C1
C2
30
r
= 2.2), thickness 0.38 mm.
MGM537
C3
output
BLS2731-50
Product specification
40