BLF346 NXP Semiconductors, BLF346 Datasheet - Page 7

RF MOSFET Power BULK TNS-RFPR

BLF346

Manufacturer Part Number
BLF346
Description
RF MOSFET Power BULK TNS-RFPR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF346

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single Quad Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-119-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF346,112

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLF346
Manufacturer:
EPSON
Quantity:
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Part Number:
BLF346
Manufacturer:
ASI
Quantity:
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Part Number:
BLF346,112
Manufacturer:
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Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, full pagewidth
VHF power MOS transistor
(1) T
(2) T
Fig.9
(dB)
d im
50
55
60
65
70
h
h
= 70 C.
= 25 C.
0
Intermodulation distortion as a function of
peak synchronized output power.
50
input
10
(1)
(2)
L1
C1
20
Fig.10 Test circuit for class-A operation at f = 225 MHz.
P o sync (W)
C2
C3
30
L2
C5
MGG109
R2
L3
40
C4
R3
R1
C6
C7
DUT
R4
7
BLF346
V B
C8
C9
C11
V DS
L4
R5
L6
C10
L7
L5
C12
C13
MGG113
C14
C15
C16
L8
Product specification
50
output
BLF346

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