BLF346 NXP Semiconductors, BLF346 Datasheet - Page 2

• Manufacturer Part Number: BLF346
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF346

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-119-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF346,112

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119A flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(V
applications. Refer to the General Section of the
associated Data Handbook for further information.
QUICK REFERENCE DATA
RF performance in a linear amplifier.
Note
1. Three-tone test method (vision carrier 8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
2003 Sep 26
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
Linear amplifier applications in television transmitters
and transposers.
GS
VHF power MOS transistor
OPERATION
MODE OF
peak synchronization level.
) information is provided for matched pair
Class-A
224.25
(MHz)
CAUTION
f
V
(V)
28
DS
(A)
I
3
D
WARNING
2
PINNING - SOT119A
handbook, halfpage
3
5
1
( C)
T
70
25
h
PIN
1
2
3
4
5
6
Fig.1 Simplified outline and symbol.
typ. 30
>24
(W)
source
source
gate
drain
source
source
P
L
DESCRIPTION
typ. 16.5
2
4
6
(dB)
>14
G
Product specification
p
g
MAM268
BLF346
(dB)
d
52
52
im
d
s
(1)