BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 6

• Manufacturer Part Number: BFM505 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFM505 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFM505,115

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
f = 900 MHz; V
Fig.6
I
Fig.8
C
= 1 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
0
8
4
0
10
0
Gain as a function of collector current;
Gain as a function of frequency;
typical values.
typical values.
CE
MSG
MSG/G max
CE
= 3 V.
= 3 V.
10
4
G UM
2
G UM
10
8
3
I C (mA)
f (MHz)
MGG199
MGG201
10
12
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
Fig.7
I
Fig.9
C
= 5 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
8
4
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency;
typical values.
CE
CE
= 3 V.
= 3 V.
MSG/G max
MSG/G max
G UM
10
4
2
G UM
10
8
Product specification
3
I C (mA)
f (MHz)
BFM505
MGG202
MGG200
10
12
4