BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 2

RF Bipolar Small Signal TAPE-7 TNS-RFSS

BFM505 T/R

Manufacturer Part Number
BFM505 T/R
Description
RF Bipolar Small Signal TAPE-7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFM505 T/R

Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Dual
Transistor Polarity
NPN/NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
8 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.018 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFM505,115
NXP Semiconductors
FEATURES
 Small size
 Temperature and h
 Low noise and high gain
 High gain at low current and low capacitance at low
 Gold metallization ensures excellent reliability.
APPLICATIONS
 Oscillator and buffer amplifiers
 Balanced amplifiers
 LNA/mixer.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
QUICK REFERENCE DATA
1996 Oct 08
Any single transistor
C
f
G
F
R
SYMBOL
T
s
voltage
Dual NPN wideband transistor
re
th j-s
UM
21
2
feedback capacitance
transition frequency
insertion power gain
maximum unilateral power gain
noise figure
thermal resistance from junction
to soldering point
FE
PARAMETER
matched
I
I
I
I
T
T
I
single loaded
double loaded
e
C
C
C
C
amb
amb
S
= 0; V
= 5 mA; V
= 5 mA; V
= 5 mA; V
= 1 mA; V
= 
= 25 C
= 25 C
opt
CB
2
CONDITIONS
= 3 V; f = 1 MHz
CE
CE
CE
CE
PINNING - SOT363A
handbook, halfpage
PIN
= 3V; f = 1 GHz
= 3 V; f = 900 MHz;
= 3 V; f = 900 MHz;
= 3 V; f = 900 MHz;
1
2
3
4
5
6
Marking code: N0.
Top view
SYMBOL
6
1
Fig.1 Simplified outline and symbol.
b
e
b
e
c
c
1
1
2
2
2
1
2
5
4
3
base 1
emitter 1
collector 2
base 2
emitter 2
collector 1
14
MIN.
b 1
DESCRIPTION
0.22
9
15
17
1.1
TYP.
Product specification
e 1
c 1
b 2
1.6
230
115
BFM505
MAX.
MAM210
e 2
c 2
pF
GHz
dB
dB
dB
K/W
K/W
UNIT

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