BFG198 T/R NXP Semiconductors, BFG198 T/R Datasheet - Page 9

• Manufacturer Part Number: BFG198 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG198 T/R

• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG198,115

NXP Semiconductors
1995 Sep 12
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
I
I
C
C
= 50 mA; V
= 50 mA; V
CE
CE
= 8 V; T
= 8 V; T
amb
amb
= 25 C; Z
= 25 C.
Fig.14 Common emitter forward transmission coefficient (S
+ j
– j
180
Fig.13 Common emitter input reflection coefficient (S
o
0
o
10
10
100
150 o
150 o
= 50 .
80
10
25
25
60
120 o
40 MHz
120 o
40
25
40 MHz
20
2 GHz
2 GHz
90 o
50
50
50
90 o
9
100
60 o
60 o
250
100
100
MBB494
MBB496
30 o
30 o
250
250
11
∞
).
0 o
21
).
ϕ
ϕ
Product specification
BFG198