PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet - Page 4

• Manufacturer Part Number: PRF949 T/R
• Description: RF Bipolar Small Signal NPN 10V 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of PRF949 T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-416
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PRF949,115

Philips Semiconductors
CHARACTERISTICS
T
Note
1. G
2000 Apr 03
DC characteristics
V
V
V
V
I
I
h
AC characteristics
C
f
G
NF
SYMBOL
s
j
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BEF
= 25 C unless otherwise specified.
re
21
UHF wideband transistor
UM
2
UM
is the maximum unilateral power gain, assuming s
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
noise figure
PARAMETER
I
I
I
I
V
V
I
I
I
I
I
I
T
I
T
f = 1 GHz
f = 2 GHz
C
C
E
E
C
C
C
C
C
C
C
amb
amb
S
S
CB
EB
= 10 A; I
= 25 mA
= 100 A; I
= 100 A; I
= 5 mA; V
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
=
=
= 10 V; I
= 1 V; I
= 25 C; f = 1 GHz
= 25 C; f = 2 GHz
opt
opt
CB
; I
; I
4
12
CONDITIONS
C
C
= 6 V; f = 1 MHz
C
C
is zero.
CE
= 5 mA; V
= 5 mA; V
E
= 0
E
B
CE
CE
CE
CE
CE
= 0
= 0
= 0
= 0
= 6 V
= 6 V
= 6 V; f
= 6 V; f = 1 GHz
= 6 V;
= 6 V;
G
CE
CE
UM
m
= 6 V;
= 6 V;
= 1 GHz
=
10
log
-------------------------------------------------------- dB
20
10
1.5
100
7
13
1
MIN.
–
s
11
150
150
0.3
9
15
16
10
1.5
2.1
s
2
TYP.
21
1
Product specification
2
–
s
22
1.05
100
100
200
2.5
MAX.
PRF949
2
V
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
UNIT