PRF949 T/R NXP Semiconductors, PRF949 T/R Datasheet

RF Bipolar Small Signal NPN 10V 9GHZ

PRF949 T/R

Manufacturer Part Number
PRF949 T/R
Description
RF Bipolar Small Signal NPN 10V 9GHZ
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PRF949 T/R

Dc Collector/base Gain Hfe Min
100
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
0.05 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-416
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PRF949,115
Product specification
Supersedes data of 1999 Nov 02
DATA SHEET
PRF949
UHF wideband transistor
DISCRETE SEMICONDUCTORS
M3D173
2000 Apr 03

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PRF949 T/R Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET PRF949 UHF wideband transistor Product specification Supersedes data of 1999 Nov 02 M3D173 2000 Apr 03 ...

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Philips Semiconductors UHF wideband transistor FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability. APPLICATIONS Communication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT416 (SC-75) package. The transistor is primarily ...

Page 3

Philips Semiconductors UHF wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC average collector current ...

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Philips Semiconductors UHF wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER DC characteristics V collector-base breakdown voltage (BR)CBO V collector-emitter breakdown (BR)CEO voltage V emitter-base breakdown voltage (BR)EBO V forward base-emitter voltage BEF I collector-base ...

Page 5

Philips Semiconductors UHF wideband transistor 200 handbook, halfpage P tot (mW) 150 100 100 Fig.2 Power derating as a function of soldering point temperature. 0.5 handbook, halfpage C re (pF) 0.4 0.3 0.2 0 ...

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Philips Semiconductors UHF wideband transistor 20 handbook, halfpage MSG gain (dB GHz maximum unilateral power gain. UM MSG = maximum ...

Page 7

Philips Semiconductors UHF wideband transistor 4 handbook, halfpage NF (dB) 3 (1) (2) 2 (3) (4) ( GHz. ( 900 MHz. (2) f ...

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Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 GHz mA ( dB. ( dB. (3) G ...

Page 9

Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 mA Fig.14 Common emitter input reflection coefficient (s handbook, full pagewidth 180 ...

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Philips Semiconductors UHF wideband transistor handbook, full pagewidth 180 mA Fig.16 Common emitter reverse transmission coefficient (s handbook, full pagewidth 180 mA ...

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Philips Semiconductors UHF wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 0.95 mm 0.1 0.15 0.10 0.60 OUTLINE VERSION ...

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Philips Semiconductors UHF wideband transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS STATUS Objective specification Development Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form ...

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Philips Semiconductors UHF wideband transistor 2000 Apr 03 NOTES 13 Product specification PRF949 ...

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Philips Semiconductors UHF wideband transistor 2000 Apr 03 NOTES 14 Product specification PRF949 ...

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Philips Semiconductors UHF wideband transistor 2000 Apr 03 NOTES 15 Product specification PRF949 ...

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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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