NE6510179A-EVPW19 CEL, NE6510179A-EVPW19 Datasheet - Page 3

• Manufacturer Part Number: NE6510179A-EVPW19
• Description: RF GaAs For NE6510179A-A Power at 1.9 GHz
• Manufacturer: CEL

Specifications of NE6510179A-EVPW19

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
1.0E+07
1.0E+06
1.0E+05
1.0E+04
1.0E+03
2.5
2.0
1.5
1.0
0.5
3
0
1.6
0
Junction Temperature, T/T
(T
CH
1805 Hrs
1.8
JUNCTION TEMPERATURE
1
= 217°C)
ARRHENIUS PLOTS vs.
DRAIN CURRENT vs.
Drain Voltage, V
DRAIN VOLTAGE
2
2
E
A
= 1.0
2.2
E
3
V
2.4
D
4
CH
2.6
(T
(V)
1.35E+06 Hrs
CH
(1/K/1000)
= 110°C)
5
2.8
6
3
V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
0 V
GS
(T
=
A
= 25°C)
2.50
2.00
1.50
1.00
0.50
30
25
20
15
10
5
0
-1.0
0.1
TRANSCONDUCTANCE AND DRAIN
MAXIMUM AVAILABLE GAIN vs.
3.5 V, 150 mA
2.2 V, 200 mA
4.6 V, 300 mA
CURRENT vs. GATE VOLTAGE
-.80
Gate Voltage, G
Frequency, GHz
FREQUENCY
-.60
-.40
V
(V)
-.20
0.00
4.0
1.00
0.8
0.6
0.4
0.2
0