NE6510179A-EVPW19 CEL, NE6510179A-EVPW19 Datasheet

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NE6510179A-EVPW19

Manufacturer Part Number
NE6510179A-EVPW19
Description
RF GaAs For NE6510179A-A Power at 1.9 GHz
Manufacturer
CEL
Datasheet

Specifications of NE6510179A-EVPW19

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• USABLE TO 3.7 GHz:
• HIGH OUTPUT POWER:
• HIGH LINEAR GAIN:
• LOW THERMAL RESISTANCE:
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
Available on Tape and Reel
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
10 dB TYP at 1.9 GHz
5°C/W
reject for several samples.
SYMBOLS
BV
P
η
I
R
DSS
G
V
OUT
ADD
I
D
TH
P
GD
L
Output Power
Linear Gain
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate to Drain Breakdown Voltage
CHARACTERISTICS
1
PACKAGE OUTLINE
MEDIUM POWER GaAs HJ-FET
PART NUMBER
(T
NEC's 3W, L&S-BAND
C
= 25°C)
UNITS
°C/W
dBm
dB
%
A
A
V
V
OUTLINE DIMENSIONS
Note: Unless otherwise specified, tolerance is ±0.2 mm
Gate
31.5
MIN
-2.0
50
12
California Eastern Laboratories
4.2 MAX
5.7 MAX
NE6510179A
Source
0.4 – 0.15
32.5
0.72
79A
TYP
10.0
2.4
58
5
PACKAGE OUTLINE 79A
Drain
MAX
-0.4
8
NE6510179A
(Units in mm)
Pin = +25 dBm, Rg = 100 Ω
f = 1900 MHz, V
I
DSQ
V
V
DS
TEST CONDITIONS
DS
= 200 mA (RF OFF)
BOTTOM VIEW
Channel to Case
= 2.5 V; I
= 2.5 V; V
I
GD
1.5 – 0.2
3.6 – 0.2
= 14 mA
0.8 MAX
D
DS
Source
GS
= 14 mA
= 3.5 V,
= 0 V
2

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NE6510179A-EVPW19 Summary of contents

Page 1

... TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW with high linear gain, high efficiency, and excellent linearity ...

Page 2

... A 2.8 G COMP mA ±25 Note: 1. Recommended maximum gain compression is 3 > 4 150 °C -65 to +150 °C ORDERING INFORMATION PART NUMBER NE6510179A-T1-A NE6510179A-A 150 (° 25°C) C TYP MAX TEST CONDITIONS 35 1900 MHz 10.0 Pin = +25 dBm 100 Ω 200 mA (RF OFF) DSQ 1.2 31.5 ...

Page 3

TYPICAL PERFORMANCE CURVES DRAIN CURRENT vs. DRAIN VOLTAGE 3 2.5 2.0 1.5 1.0 0 Drain Voltage ARRHENIUS PLOTS vs. JUNCTION TEMPERATURE 1.0E+07 1.0E+ 1.0 V 1.0E+ 1.0E+04 ...

Page 4

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE6510179A 150 FREQUENCY S 11 GHz MAG ANG 0.50 0.956 179.67 0.60 0.955 177.71 0.70 0.956 175.93 0.80 0.955 174 ...

Page 5

... NE6510179A TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE6510179A 300 FREQUENCY S 11 GHz MAG ANG 0.50 0.964 179.30 0.60 0.963 177.40 0.70 0.964 175.60 0.80 ...

Page 6

... NE65XXX79A-EV 100637 .034 L = .890 L = .874 .010 W = .010 R1 NE6510179A L = .280 W = .050 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1 100 pF CAP MURATA 0603 20 OHM RESISTOR ROHM CASE A 6.8 pF CAP ATC CASE A 4.3 pF CAP ATC CASE CAP ATC CASE A 4.7 pF CAP ATC CASE A 1.8 pF CAP ATC CASE B 4.7 µ ...

Page 7

... NE6510179A TYPICAL APPLICATION CIRCUIT PERFORMANCE at V PAE & GAIN vs. OUTPUT POWER Gain Gain, I PAE 1.96 GHz, DS PAE Output Power, P OUT GAIN & SATURATED POWER vs. FREQUENCY Gain for Gain OUT Gain for P SAT 1.90 1.92 1.94 1.96 1.98 Frequency, f (GHz) THIRD ORDER INTERMODULATION vs ...

Page 8

... GHz IS95 CDMA Output Power, P OUT ACPR2 1.25 MHz 50 100 mA 200 mA 55 400 mA 600 mA 800 (dBm) NE6510179A = 3 V and ACPR vs. OUTPUT POWER 1.96 GHz IS95 CDMA ACPR1 885 KHz I DSQ I DSQ I DSQ I DSQ I DSQ Output Power, P (dBm) OUT ACPR2 1.25 MHz ...

Page 9

... These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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