NE6510179A-EVPW19 CEL, NE6510179A-EVPW19 Datasheet - Page 2

• Manufacturer Part Number: NE6510179A-EVPW19
• Description: RF GaAs For NE6510179A-A Power at 1.9 GHz
• Manufacturer: CEL

Specifications of NE6510179A-EVPW19

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
NE6510179A
Notes:
1. Pin = 0 dBm
Note:
1. Operation in excess of any one of these parameters may result
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
in permanent damage.
T
V
V
T
I
I
P
STG
DS
GS
GS
CH
DS
T
SYMBOLS
20
15
10
η
η
P
P
5
0
G
G
OUT
OUT
ADD
I
ADD
I
D
D
L
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current (I
Total Power Dissipation
Channel Temperature
Storage Temperature
TOTAL POWER DISSIPATION vs.
PARAMETERS
25°C
Case Temperature, T
CASE TEMPERATURE
50
GF
R
, I
TH
GR
CHARACTERISTICS
= 8°C/W
Output Power
Linear Gain
Power Added Efficiency
Drain Current
Output Power
Linear Gain
Power Added Efficiency
Drain Current
)
2
100
C
UNITS
(°C)
1
1
mA
°C
°C
W
V
V
A
1
150
(T
-65 to +150
RATINGS
C
±25
150
= 25 °C)
2.8
15
-4
8
UNITS
dBm
dBm
dB
dB
%
%
A
A
Note:
1. Recommended maximum gain compression is 3.0 dB at
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS
G
NE6510179A-T1-A
V
NE6510179A-A
V
T
COMP
PART NUMBER
DS
DS
CH
MIN
> 4.2 V.
Drain to Source Voltage
Channel Temperature
Gain Compression
PARAMETERS
TYP
35.0
10.0
31.5
15.0
0.53
1.2
56
70
(T
MAX
C
1
= 25°C)
Pin = +20 dBm, Rg = 100 Ω
Pin = +25 dBm, Rg = 100 Ω
f = 1900 MHz, V
UNITS
f = 900 MHz, V
I
I
DSQ
DSQ
°C
dB
Bulk, 100 piece min.
V
TEST CONDITIONS
= 200 mA (RF OFF)
= 200 mA (RF OFF)
1 K/Reel
QTY
TYP
3.5
DS
DS
= 3.5 V,
MAX
+125
= 5.0 V,
6.0
3.0