NE5520379A NEC, NE5520379A Datasheet - Page 4

• Manufacturer Part Number: NE5520379A
• Description: RF GaAs L&S Band LD-MOSFET
• Manufacturer: NEC

Specifications of NE5520379A

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 2.5 S
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Package / Case: 79A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
4
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
36
35
34
33
32
31
0
0.0
5
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
3.6 V
V
I
f = 915 MHz
Dset
V
f = 915 MHz
P
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
in
1
= 3.2 V
= 600 mA
= 25 dBm
= 3.2 V
10
Drain to Source Voltage V
Gate to Source Voltage V
2
1.0
Input Power P
3
15
3.4 V
4
2.0
20
5
P
P
I
out
D
I
in
out
D
6
(dBm)
25
7
3.0
GS
DS
A
(V)
(V)
8
= +25° ° ° ° C)
30
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
9
Data Sheet PU10122EJ03V0DS
4.0
10
35
2 500
2 000
1 500
1 000
500
0
2 500
2 000
1 500
1 000
500
0
10 000
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1 000
100
100
100
10
50
50
1
0
0
1.0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
5
V
I
f = 915 MHz
Dset
V
f = 915 MHz
P
DS
V
DS
in
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DS
= 3.2 V
= 600 mA
= 25 dBm
= 3.2 V
10
= 3.2 V
Gate to Source Voltage V
Gate to Source Voltage V
1.5
1.0
Input Power P
15
2.0
2.0
20
η
η
add
in
d
(dBm)
25
η
η
GS
GS
2.5
3.0
NE5520379A
add
d
(V)
(V)
30
3.0
4.0
35