MRF8S21100HSR3 Freescale Semiconductor, MRF8S21100HSR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S21100HSR3
• Description: RF MOSFET Power HV8 2.1GHZ 100W
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21100HSR3

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
18.5
17.5
16.5
19
18
17
16
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
19.5
18.5
17.5
16.5
15.5
--10
--20
--30
--40
--50
--60
20
19
18
17
16
15
--1
--2
--3
--4
--5
1
0
2060
10
1
Broadband Performance @ P
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
IM7--U
Figure 3. Intermodulation Distortion Products
ACPR
IM7--L
IM3--U
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L
DD
G
Compression (PARC) versus Output Power
DD
ps
Figure 4. Output Peak- -to- -Average Ratio
= 28 Vdc, P
2080
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
= 28 Vdc, P
--1 dB = 22 W
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
DD
TYPICAL CHARACTERISTICS
= 28 Vdc, I
20
2100
versus Two- -Tone Spacing
out
P
out
PARC
TWO--TONE SPACING (MHz)
out
= 24 W (Avg.), I
= 36 W (PEP), I
--2 dB = 30 W
, OUTPUT POWER (WATTS)
DQ
2120
f, FREQUENCY (MHz)
= 700 mA, f = 2140 MHz
30
η
IRL
D
2140
--3 dB = 40 W
10
DQ
IM5--L
IM5--U
DQ
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
= 700 mA
= 700 mA
40
2160
out
ACPR
= 24 Watts Avg.
2180
50
PARC
η
2200
D
G
ps
2220
MRF8S21100HR3 MRF8S21100HSR3
100
60
34.5
34
33.5
33
32.5
--34
--35
--36
--37
--38
--39
70
60
50
40
30
20
10
--20
--25
--30
--35
--40
--45
--50
--7.5
--10
--12.5
--15
--17.5
--20
--1
--1.2
--1.4
--1.6
--1.8
--2
5