MRF8S21100HSR3 Freescale Semiconductor, MRF8S21100HSR3 Datasheet

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MRF8S21100HSR3

Manufacturer Part Number
MRF8S21100HSR3
Description
RF MOSFET Power HV8 2.1GHZ 100W
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MRF8S21100HSR3

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8S21100HSR3
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 138 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W--CDMA and LTE base station applications with frequencies
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
700 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
and Common Source S--Parameters
Operation
Derate above 25°C
Case Temperature 77°C, 24 W CW, 28 Vdc, I
Case Temperature 80°C, 100 W CW
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
2110 MHz
2140 MHz
2170 MHz
out
out
@ 1 dB Compression Point ≃ 100 Watts CW
= 24 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25°C
(dB)
17.9
18.1
18.3
G
ps
(2,3)
Characteristic
(1)
Rating
, 28 Vdc, I
33.0
33.0
33.4
(%)
η
D
DQ
= 700 mA, 2140 MHz
DQ
Output PAR
= 700 mA, 2140 MHz
(dB)
DD
6.4
6.4
6.3
out
= 28 Volts, I
)
ACPR
(dBc)
--38.7
--38.2
--37.2
DQ
=
(1)
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
θJC
GS
DD
stg
C
Document Number: MRF8S21100H
J
2110- -2170 MHz, 24 W AVG., 28 V
MRF8S21100HR3 MRF8S21100HSR3
MRF8S21100HSR3
MRF8S21100HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
CASE 465A- -06, STYLE 1
CASE 465- -06, STYLE 1
MRF8S21100HSR3
MRF8S21100HR3
W- -CDMA, LTE
--65 to +150
Value
--0.5, +65
--6.0, +10
32, +0
Value
0.57
0.48
0.45
NI- -780S
150
225
108
NI- -780
(3,4)
Rev. 0, 10/2010
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
1

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