MRF8S21100HSR3 Freescale Semiconductor, MRF8S21100HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S21100HSR3
• Description: RF MOSFET Power HV8 2.1GHZ 100W
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S21100HSR3

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 36 W PEP, P
VBW Resonance Point
Gain Flatness in 60 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +80°C)
(--30°C to +80°C)
@ 1 dB Compression Point, CW

(1)
30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 24 W Avg.
DD
= 28 Vdc, I
Symbol
IMD
VBW
∆P1dB
P1dB
∆G
G
sym
F
DQ
res
= 700 mA, 2110--2170 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8S21100HR3 MRF8S21100HSR3
0.011
0.005
Typ
100
0.4
40
50
Max
—
—
—
—
—
—
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
3