PTFB211503FL V1 Infineon Technologies, PTFB211503FL V1 Datasheet - Page 11

• Manufacturer Part Number: PTFB211503FL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503FL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-34288-2
• Other names: FB211503FLV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Component Information
Component
Input
C101, C102
C103, C104
C105
C106
C107
C801, C802, C803
R101, R104, R803, R805
R801
R802
R804
S1
S2
S3
Output
C201, C206
C202, C210
C203, C209
C204, C205
C207
C208
Data Sheet
(cont.)
Description
Chip capacitor, 10 pF
Chip capacitor, 4.71 μF
Chip capacitor, 0.6 pF
Chip capacitor, 2.2 pF
Chip capacitor, 8.2 pF
Capacitor, 1000 pF
Resistor, 10 W
Resistor, 1200 W
Resistor, 1300 W
Resistor, 100 W
Voltage Regulator
Transistor
Potentiometer, 2k W
Chip capacitor, 1 μF
Chip capacitor, 2.2 μF
Capacitor, 10 μF
Capacitor, 10 μF
Chip capacitor, 8.2 pF
Chip capacitor, 0.5 pF
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PTFB211503EL
PTFB211503FL
Rev. 04, 2011-03-07