PTFB211503FL V1 Infineon Technologies, PTFB211503FL V1 Datasheet - Page 10

• Manufacturer Part Number: PTFB211503FL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503FL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-34288-2
• Other names: FB211503FLV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Circuit Assembly Information
Test Fixture Part No.
Find Gerber files for this test fixture on the Infineon Web site at
Reference circuit assembly diagram (not to scale)
Data Sheet
RF_IN
R803
S3
RO4350, .030
R805
R804
R101
R104
(cont.)
C107
LTN/PTFB211503EF
C103
C104
C801 C802
C102
S1
PTFB211503_IN_02
C101
C106
C105
R801
C803
R802
S2
(60)
V
DD
http://www.infineon.com/rfpower
10 of 14
RO4350, .030
C204
C205
C201
C202
C210
C206
PTFB211503_OUT_02
C208
10 µF
µF
C209
C203
10
C207
PTFB211503EL
(60)
PTFB211503FL
b 2 1 1 5 0 3 e f l _ C D _ 1 1 - 1 0 - 2 0 1 0
Rev. 04, 2011-03-07
RF_OUT
V
V
DD
DD