BT151X-800R NXP Semiconductors, BT151X-800R Datasheet - Page 5

• Manufacturer Part Number: BT151X-800R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-800R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151X-800R,127

Philips Semiconductors
5. Thermal characteristics
Table 4:
6. Isolation characteristics
Table 5:
T
9397 750 13162
Product data sheet
Symbol
R
R
Symbol
V
C
hs
Fig 6. Transient thermal impedance as a function of pulse width.
isol
th(j-hs)
th(j-a)
isol
= 25 C unless otherwise specified
Z
(K/W)
th(j-hs)
(1) Without heatsink compound.
(2) With heatsink compound.
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Isolation limiting values and characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Parameter
RMS isolation voltage from all
three terminals to external
heatsink
capacitance from pin 2 to
external heatsink
10
4
10
3
Conditions
Figure 6
with heatsink compound
without heatsink compound
in free air
Conditions
f = 50 to 60 Hz; sinusoidal
waveform; R.H.
dust free
f = 1 MHz
Rev. 04 — 9 June 2004
10
2
65%; clean and
10
1
(1)
(2)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
Typ
-
-
55
Typ
-
10
P
1
t
p
T
Max
4.5
6.5
-
Max
2500
-
t
p
(s)
001aaa964
=
t
T
t
p
Thyristors
10
Unit
K/W
K/W
K/W
Unit
V
pF
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