BT151X-800R NXP Semiconductors, BT151X-800R Datasheet - Page 4

• Manufacturer Part Number: BT151X-800R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151X-800R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151X-800R,127

Philips Semiconductors
9397 750 13162
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values.
p
5
2
10 ms.
hs
10
dl
87 C.
T
1
/dt limit
1
surge duration (s)
10
001aaa955
4
10
Rev. 04 — 9 June 2004
Fig 5. RMS on-state current as a function of heatsink
I
T(RMS)
(A)
16
12
8
4
0
temperature; maximum values.
50
10
3
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
50
t
p
T
I
T
j
(s)
initial = 25 C max
t
p
100
T
001aaa956
001aaa960
hs
I
TSM
( C)
t
10
150
Thyristors
2
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