BT151X-800R NXP Semiconductors, BT151X-800R Datasheet - Page 3
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BT151X-800R
Manufacturer Part Number
BT151X-800R
Description
SCRs RAIL SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT151X-650R127.pdf
(11 pages)
Specifications of BT151X-800R
Breakover Current Ibo Max
110 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT151X-800R,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT151X-800R/DG
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 13162
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
a = form factor = I
f = 50 Hz.
values.
0
1
T(RMS)
/I
T(AV)
.
2
10
4
Rev. 04 — 9 June 2004
4
2.8
10
2
2.2
conduction
(degrees)
angle
120
180
30
60
90
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
factor
1.9
form
1.57
2.8
2.2
1.9
a
4
T
I
T
n
j
I
initial = 25 C max
T(AV)
t
p
(A)
001aaa961
001aaa957
I
1.57
TSM
a =
t
10
Thyristors
8
3
57.5
80
102.5
125
T
hs(max)
( C)
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