BT168E NXP Semiconductors, BT168E Datasheet - Page 10

• Manufacturer Part Number: BT168E
• Description: SCRs BULK MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BT168E

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT168E,112

Philips Semiconductors
9. Revision history
Table 6:
9397 750 13511
Product data sheet
Document ID
BT168_SERIES_4
Modifications:
BT168_SERIES_3
BT168_SERIES_2
BT168_SERIES_1
Revision history
Release date
20040820
20010902
20010901
19970901
•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 04 — 20 August 2004
Thyristors logic level for RCD/GFI/LCCB applications
Change notice
-
-
-
-
Order number
9397 750 13511
not applicable
not applicable
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
Supersedes
BT168_SERIES_3
BT168_SERIES_2
BT168_SERIES_1
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