BT151U-500C NXP Semiconductors, BT151U-500C Datasheet - Page 3

SCRs THYRISTOR

BT151U-500C

Manufacturer Part Number
BT151U-500C
Description
SCRs THYRISTOR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT151U-500C

Breakover Current Ibo Max
110 A
Rated Repetitive Off-state Voltage Vdrm
500 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Package / Case
SOT-533
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT151U-500C,127
Philips Semiconductors
April 2004
P tot
Thyristors
(W)
I T(RMS)
15
10
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
5
0
(A)
Fig.3. Maximum permissible rms current I
0
on-state current I
15
10
1000
5
0
100
-50
10
conduction
angle
10us
120˚
180˚
30˚
60˚
90˚
versus mounting base temperature T
( )
average on-state current, I
ITSM / A
30
I
T
Tj initial = 25 C max
dI /dt limit
sinusoidal currents, t
form
factor
1.9
1.57
T
(a)
4.0
2.8
2.2
a = form factor = I
4
T
2
I TSM
time
0
4
100us
TSM
, versus pulse width t
4
2.8
T / s
50
T(RMS)
2.2
p
1ms
T(AV)
6
/ I
10ms.
1.9
T(AV)
I T(AV) (A)
, where
a = 1.57
100
.
tot
104 ˚C
T mb ( C)
, versus
mb
T(RMS)
p
8
, for
.
10ms
T mb(max)
118.5
125
105.5
112
( C)
,
150
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
BT151U series C
mb
I
T
Tj initial = 25 C max
100
Product specification
1
T
100 ˚C.
100
I TSM
time
Rev 1.000
1000
150
10
j
.

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