BT151U-500C NXP Semiconductors, BT151U-500C Datasheet - Page 2

• Manufacturer Part Number: BT151U-500C
• Description: SCRs THYRISTOR
• Manufacturer: NXP Semiconductors

Specifications of BT151U-500C

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 500 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-533
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151U-500C,127

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
April 2004
Thyristors
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
, I
D
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
in free air
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform
I
dI
V
I
dV
T
TM
TM
D
D
D
D
D
D
DM
D
G
= 23 A
D
/dt = 5 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 40 A; V
= 67% V
= 20 A; V
/dt = 50 V/ s; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
R
DRM(max)
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
= 25 V; dI
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
; T
GK
RRM(max)
j
= 125 ˚C;
j
= 100
Gate open circuit
= 125 ˚C;
TM
; I
/dt = 30 A/ s;
G
j
= 125 ˚C
; T
R
= 0.1 A;
GK
j
= 125 ˚C
= 100
MIN.
MIN.
MIN.
0.25
200
50
-
-
-
-
-
-
-
-
-
-
BT151U series C
TYP.
TYP.
TYP.
1000
1.44
130
0.6
0.4
0.1
70
10
70
2
7
2
-
Product specification
MAX.
MAX.
MAX.
1.75
1.3
1.5
0.5
15
40
20
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
V
V
V
s
s