BT169D NXP Semiconductors, BT169D Datasheet - Page 5

SCRs BULK SCR

BT169D

Manufacturer Part Number
BT169D
Description
SCRs BULK SCR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT169D

Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT169D,112

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Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13512
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
5
Thermal characteristics
10
4
10
3
Conditions
printed-circuit board
mounted; lead length = 4 mm
Rev. 04 — 23 August 2004
10
2
10
1
Min
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT169 series
P
1
Typ
-
150
t
Thyristors logic level
p
T
t
p
(s)
001aab451
Max
60
-
=
t
T
t
p
10
Unit
K/W
K/W
5 of 12

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