BT169D NXP Semiconductors, BT169D Datasheet - Page 4

• Manufacturer Part Number: BT169D
• Description: SCRs BULK SCR
• Manufacturer: NXP Semiconductors

Specifications of BT169D

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT169D,112

Philips Semiconductors
9397 750 13512
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
1.5
0.5
10
1
2
1
0
3
2
10
10
t
values.
f = 50 Hz; T
duration for sinusoidal currents.
p
5
2
10 ms.
lead
10
83 C.
1
1
surge duration (s)
10
001aab449
4
Rev. 04 — 23 August 2004
10
Fig 5. RMS on-state current as a function of lead
I
T(RMS)
(1) T
(A)
0.8
0.6
0.4
0.2
1
0
temperature; maximum values.
50
lead
= 83 C.
10
3
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
BT169 series
T
I
T
t
j
p
initial = 25 C max
(s)
t
p
Thyristors logic level
(1)
100
T
I
lead
001aab497
001aab450
TSM
t
( C)
10
150
2
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