BT169G AMO NXP Semiconductors, BT169G AMO Datasheet - Page 7

• Manufacturer Part Number: BT169G AMO
• Description: SCRs AMMORA SCR
• Manufacturer: NXP Semiconductors

Specifications of BT169G AMO

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT169G,126

Philips Semiconductors
9397 750 13512
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current characteristics.
V
GT(25 C)
V
GT(Tj)
(1) T
(2) T
(3) T
(A)
I
T
1.6
1.2
0.8
0.4
5
4
3
2
1
0
junction temperature.
V
R
0.4
50
j
j
j
O
S
= 125 C; typical values.
= 125 C; maximum values.
= 25 C; maximum values.
= 0.187 .
= 1.067 V.
(1)
0
1.2
(2)
50
(3)
2
100
V
T
001aab501
T
001aab454
(V)
j
( C)
150
Rev. 04 — 23 August 2004
2.8
Fig 8. Normalized gate trigger current as a function
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT(Tj)
I
L(Tj)
3
2
1
0
3
2
1
0
junction temperature.
R
junction temperature.
50
50
GK
= 1 k .
0
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
50
BT169 series
Thyristors logic level
100
100
001aab502
T
001aab503
T
j
j
( C)
( C)
150
150
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