BT169G AMO NXP Semiconductors, BT169G AMO Datasheet - Page 10

• Manufacturer Part Number: BT169G AMO
• Description: SCRs AMMORA SCR
• Manufacturer: NXP Semiconductors

Specifications of BT169G AMO

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT169G,126

Philips Semiconductors
9. Revision history
Table 6:
9397 750 13512
Product data sheet
Document ID
BT169_SERIES_4
Modifications:
BT169_SERIES_3
BT169_SERIES_2
BT169_SERIES_1
Revision history
Release date
20040823
20010902
20010901
19970901
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•
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The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Section 1.4 “Quick reference
Table 2 “Ordering
Table 3 “Limiting
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
values”: BT169E obsolete, removed from table.
information”: BT169E obsolete, removed from table.
Rev. 04 — 23 August 2004
data”: BT169E obsolete, removed from list.
Change notice
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-
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Order number
9397 750 13512
not applicable
not applicable
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT169 series
Thyristors logic level
Supersedes
BT169_SERIES_3
BT169_SERIES_2
BT169_SERIES_1
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