BT139X-600E NXP Semiconductors, BT139X-600E Datasheet - Page 7

• Manufacturer Part Number: BT139X-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139X-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139X-600E,127

Philips Semiconductors
9397 750 13439
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current characteristics.
V
V
GT(25 C)
GT(Tj)
(1) T
(2) T
(3) T
(A)
I
T
1.6
1.2
0.8
0.4
50
40
30
20
10
0
junction temperature.
V
R
50
0
j
j
j
O
s
= 125 C; typical values.
= 25 C; maximum values.
= 125 C; maximum values.
= 0.018 .
= 1.195 V.
0
1
(1)
50
(2)
2
(3)
100
V
T
001aab101
T
001aab094
(V)
j
( C)
Rev. 03 — 23 September 2004
150
3
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
I
L(25 C)
GT
I
L(Tj)
(1) T2 G+.
(2) T2+ G .
(3) T2 G .
(4) T2+ G+.
(
Tj
)
3
2
1
0
3
2
1
0
junction temperature.
junction temperature.
50
50
(4)
(1)
(2)
(3)
0
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
50
BT139X-600E
Triacs; sensitive gate
100
100
001aab448
T
001aab100
T
j
j
( C)
( C)
150
150
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