BT139X-600E NXP Semiconductors, BT139X-600E Datasheet - Page 5

• Manufacturer Part Number: BT139X-600E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139X-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139X-600E,127

Philips Semiconductors
5. Thermal characteristics
Table 4:
6. Isolation characteristics
Table 5:
T
9397 750 13439
Product data sheet
Symbol
R
R
Symbol
V
C
hs
Fig 6. Transient thermal impedance as a function of pulse width.
isol
th(j-hs)
th(j-a)
isol
= 25 C unless otherwise specified.
Z
(K/W)
th(j-hs)
(1) Unidirectional without heatsink compound.
(2) Unidirectional with heatsink compound.
(3) Bidirectional without heatsink compound.
(4) Bidirectional with heatsink compound.
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Isolation limiting values and characteristics
Parameter
thermal resistance junction
to heatsink
thermal resistance junction
to ambient
Parameter
RMS value isolation voltage from all three
terminals to external heatsink
capacitance from pin 2 to external heatsink f = 1 MHz
10
4
10
Conditions
full or half cycle with heatsink
compound
full or half cycle without heatsink
compound
in free air
3
Rev. 03 — 23 September 2004
Conditions
f = 50 to 60 Hz; sinusoidal
waveform; R.H.
clean and dust free
10
2
(1)
(2)
(3)
(4)
10
65 %;
1
Min
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT139X-600E
P
Typ
-
-
55
Min
-
-
D
1
Triacs; sensitive gate
t
p
Typ
-
10
t
p
Max
4.0
5.5
-
(s)
001aab097
t
Max
2500 V
-
10
Unit
K/W
K/W
K/W
Unit
pF
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