TISP4360M3BJR Bourns Inc., TISP4360M3BJR Datasheet - Page 3

• Manufacturer Part Number: TISP4360M3BJR
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP4360M3BJR

• Breakover Current Ibo Max: 32 A
• Rated Repetitive Off-state Voltage Vdrm: 290 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOVEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
R
NOTE
Electrical Characteristics for the R and T Terminals, T A = 25
Recommended Operating Conditions
Thermal Characteristics
dv/dt
V
I
R
I
S
C
DRM
(BO)
(BO)
I
I
I
θ
H
D
D
off
JA
TISP43xxMMAJ/BJ Overvoltage Protector Series
series resistor for FCC Part 68, 10/160, 10/560 type A surge survival
series resistor for FCC Part 68, 9/720 type B surge survival
series resistor for GR-1089-CORE first-level and second-level surge survival
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
series resistor for K.21 coordination with a 400 V primary protector
Junctio n to free air thermal resistance
6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Off-state capacitance
Critical rate of rise of
Parameter
Repetitive peak off-
Breakover voltage
Breakover current
off-state voltage
Off-state current
Off-state current
Holding current
state current
Parameter
dv/dt = ±250 V/ms, R
V
dv/dt = ±250 V/ms, R
I
Linear voltage ramp, Maximum ramp value < 0.85V
‘4300, V
‘4350, V
‘4360, V
V
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V = ±50 V
T
D
D
= ±5 A, di/dt = -/+30 mA/ms
= V
= ±50 V
DRM
D
D
D
= ±207 V
= ±248 V
= ±261 V
d
d
Component
SOURCE
SOURCE
T
265 mm x 210 mm populated line card,
4-layer PCB, I
EIA/JESD51-3 PCB, I
A
D
D
Test Conditions
= 25 °C, (see Note 6)
= ±1 V
= 300 Ω
= 300 Ω
°
C (Unless Otherwise Noted)
Test Conditions
T
= I
TSM(1000)
T
= I
DRM
TSM(1000)
, T
A
= 25 °C
,
T
T
A
A
= 25 °C
= 85 °C
‘4300
‘4350
‘4360
±0.15
Min
Min
Min
6.6
13
15
±5
0
0
Typ
Typ
Typ
52
±300
±350
±360
Max
Max
±0.8
±0.6
Max
±10
±10
115
±5
±2
40
18
kV/µs
°C/W
Unit
Unit
Unit
±10
µA
µA
pF
Ω
Ω
Ω
Ω
Ω
V
A
A