TISP4360M3BJR Bourns Inc., TISP4360M3BJR Datasheet - Page 2

• Manufacturer Part Number: TISP4360M3BJR
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP4360M3BJR

• Breakover Current Ibo Max: 32 A
• Rated Repetitive Off-state Voltage Vdrm: 290 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
This TISP43xxMM range consists of three voltage variants targeted at specific applications: ADSL, electro-mechanical hook switch and solid
state hook switch modems. These parts are guaranteed to voltage limit and withstand the listed international lightning surges in both
polarities. Two packages are available; SMB (JEDEC DO-214AA with J-bend leads) and SMA (JEDEC DO-214AC with J-bend leads). These
devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory.
Absolute Maximum Ratings, T A = 25
Overload Ratings, T A = 25
Description (Continued)
Repetitive peak off-state voltage,
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
Junction temperature
Storage temperature range
NOTES: 1. For voltage values at lower temperatures derate at 0.13 %/°C.
Peak overload on-state current, Type A impulse (see Note 5)
10/160 µs
10/560 µs
Peak overload on-state current, a.c. power cross tests UL 60950 (see Note 5)
NOTE
TISP43xxMMAJ/BJ Overvoltage Protector Series
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
10/160 µs (FCC Part 68 (TIA/EIA-IS-968), 10/160 µs voltage wave shape)
5/320 µs (FCC Part 68 (TIA/EIA-IS-968), 9/720 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/45/21)
10/560 µs (FCC Part 68 (TIA/EIA-IS-968), 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
2. Initially, the TISP43xxMM must be in thermal equilibrium with T
3. The surge may be repeated after the TISP43xxMM returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
5: These electrical stress levels may damage the TISP43xxMM silicon chip. After test, the pass criterion is either that the device is
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C.
functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected
as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed.
°
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted)
Rating
Rating
J
= 25 °C.
Customers should verify actual device performance in their specific applications.
‘4300
‘4350
‘4360
Specifications are subject to change without notice.
Symbol
Symbol
I
I
T(OV)M
T(OV)M
V
I
I
T
TSM
DRM
TSP
T
stg
J
NOVEMBER 2001 - REVISED JANUARY 2007
See Figure 10
-40 to +150
-65 to +150
versus time
for current
Value
Value
±230
±275
±290
200
100
250
1.6
18
75
65
65
55
50
7
Unit
Unit
°C
°C
V
A
A
A
A