IRKT162/12PBF Vishay, IRKT162/12PBF Datasheet - Page 2

• Manufacturer Part Number: IRKT162/12PBF
• Description: SCR Modules 1200 Volt 160 Amp
• Manufacturer: Vishay

Specifications of IRKT162/12PBF

• Mounting Style: Screw
• Peak Repetitive Off-state Voltage, Vdrm: 1200V
• Gate Trigger Current Max, Igt: 150mA
• Current It Av: 160A
• On State Rms Current It(rms): 355A
• Holding Current Max Ih: 200mA
• Gate Trigger Voltage Max: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VSK.91.. Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
(3)
(4)
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.91
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
I
Average power = V
16.7 % x π x I
I > π x I
2
t for time t
AV
2
2
t for fusing
√t for fusing
x
= I
AV
2
√t x √t
< I < π x I
VOLTAGE
T(TO)
CODE
04
06
08
10
12
14
16
x
x I
AV
T(AV)
+ r
REVERSE VOLTAGE
REPETITIVE PEAK
t
x (I
V
RRM
T(RMS)
For technical questions, contact: [e-mail]
, MAXIMUM
1000
1200
1400
1600
400
600
800
V
)
2
SYMBOL
V
I
I
O(RMS)
T(TO)
I
I
2
dI/dt
I
I
Thyristor/Diode and Thyristor/Thyristor, 95 A
T(AV)
F(AV)
r
V
V
TSM
FSM
√t
t
ADD-A-PAK Generation VII Power Modules
I
or
I
I
2
TM
FM
H
(2)
L
t
(1)
(2)
180° conduction, half sine wave,
T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
T
Low level
High level
Low level
High level
I
I
T
I
T
resistive load, gate open circuit
T
TM
FM
TM
C
J
J
J
J
NON-REPETITIVE PEAK
= T
= 25 °C, from 0.67 V
= 25 °C, anode supply = 6 V,
= 25 °C, anode supply = 6 V, resistive load
= 85 °C
= π x I
= π x I
= π x I
REVERSE VOLTAGE
J
V
maximum
RSM
T(AV)
F(AV)
T(AV)
(3)
(3)
(4)
(4)
, MAXIMUM
1100
1300
1500
1700
500
700
900
V
, I
g
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T
T
T
= 500 mA, t
J
J
J
I
(RMS)
= T
= T
= 25 °C
J
J
DRM
or
maximum
maximum
RRM
RRM
,
r
< 0.5 µs, t
Sinusoidal
half wave,
initial T
Initial T
PEAK OFF-STATE VOLTAGE,
V
DRM
GATE OPEN CIRCUIT
, MAXIMUM REPETITIVE
J
J
p
= T
= T
I
(RMS)
> 6 µs
J
J
maximum
maximum
1000
1200
1400
1600
400
600
800
V
Document Number: 94632
VALUES
18.26
14.14
12.91
Revision: 08-Dec-08
2000
2094
1682
1760
0.97
2.76
2.38
1.73
210
200
150
250
400
1.1
95
20
AT 125 °C
UNITS
I
I
kA
RRM,
mA
kA
DRM
A/µs
15
mΩ
mA
A
V
V
2
2
√s
s