BAS85 /T3 NXP Semiconductors, BAS85 /T3 Datasheet - Page 4

• Manufacturer Part Number: BAS85 /T3
• Description: Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BAS85 /T3

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2.3 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: LLDS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS85,135

NXP Semiconductors
BAS85
Product data sheet
Fig 1.
Fig 3.
(nA)
I
(mA)
I
F(AV)
R
10
(1) T
(2) T
(3) T
10
10
10
10
250
200
150
100
10
−1
50
1
5
4
3
2
0
FR4 PCB, standard footprint
ambient temperature; derating curve
voltage; typical values
0
Average forward current as a function of
0
Reverse current as a function of reverse
amb
amb
amb
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
(3)
50
10
100
20
T
amb
V
All information provided in this document is subject to legal disclaimers.
R
(V)
(°C)
mra540
mgc682
Rev. 6 — 10 September 2010
150
30
Fig 2.
Fig 4.
(mA)
(pF)
(1) T
(2) T
(3) T
C
10
I
F
10
10
d
12
10
−1
8
4
0
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2) (3)
amb
0.4
10
= 25 °C
(1) (2) (3)
Schottky barrier diode
0.8
20
© NXP B.V. 2010. All rights reserved.
V
V
R
F
(V)
(V)
BAS85
mld358
mgc681
1.2
30
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