BAS85 /T3 NXP Semiconductors, BAS85 /T3 Datasheet - Page 3

• Manufacturer Part Number: BAS85 /T3
• Description: Schottky (Diodes & Rectifiers) DIODE SCHTKY TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BAS85 /T3

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2.3 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: LLDS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS85,135

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS85
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
R
Symbol
V
I
C
R
amb
F
th(j-a)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 10 September 2010
V
Conditions
I
I
I
I
I
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 25 V
= 1 V; f = 1 MHz
Conditions
in free air
[1]
[1]
Min
-
Min
-
-
-
-
-
-
-
Schottky barrier diode
Typ
-
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAS85
Max
320
Max
240
320
400
500
800
2.3
10
Unit
K/W
3 of 10
Unit
mV
mV
mV
mV
mV
μA
pF